Chanhyeok Park, Seonchang Kim, Gyeong Ryul Lee, R. Chung
{"title":"Tin Oxide Field-Effect Transistors Deposited by Thermal Atomic Layer Deposition with H2O Reactant","authors":"Chanhyeok Park, Seonchang Kim, Gyeong Ryul Lee, R. Chung","doi":"10.5757/asct.2022.31.6.145","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":8223,"journal":{"name":"Applied Science and Convergence Technology","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Science and Convergence Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5757/asct.2022.31.6.145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
