M. Kirley, Benjamin B. Yang, K. Willis, Marcus J. Weber, N. Sule, S. Hagness, I. Knezevic, J. Booske
{"title":"Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity","authors":"M. Kirley, Benjamin B. Yang, K. Willis, Marcus J. Weber, N. Sule, S. Hagness, I. Knezevic, J. Booske","doi":"10.1109/IRMMW-THZ.2011.6105218","DOIUrl":null,"url":null,"abstract":"The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"35 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THZ.2011.6105218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.