Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity

M. Kirley, Benjamin B. Yang, K. Willis, Marcus J. Weber, N. Sule, S. Hagness, I. Knezevic, J. Booske
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引用次数: 1

Abstract

The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.
用高质量因数谐振腔测量掺硅的近太赫兹电导率
在400 GHz和650 GHz下测量了掺杂硅的电导率。测量使用高质量因数,半共焦谐振腔。提出的数据与传统理论(德鲁德模型)相矛盾,与威斯康星大学麦迪逊分校正在开发的多物理场计算模型一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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