Isolated Preset Architecture for a 32nm SOI embedded DRAM macro

J. Barth, D. Plass, Adis Vehabovic, R. Joshi, R. Kanj, S. Burns, T. Weaver
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Abstract

The Isolated Preset Architecture (IPA) improves retention characteristics by implementing a weak read `1' Isolation scheme, allowing a lower stored `1' level to be sensed. The architecture also reduces sub-array area by 15% and bit-line activation power by 2× compared to previous design, without impacting performance. The architecture was implemented in IBM's 32nm High-K/Metal SOI embedded DRAM technology. Hardware results confirm 1.8ns random cycle and 2× improved retention characteristic with optimized Analog reference tuning.
32纳米SOI嵌入式DRAM宏的隔离预置架构
隔离预置架构(IPA)通过实现弱读“1”隔离方案来改善保留特性,允许感知较低的存储“1”级别。与之前的设计相比,该架构还减少了15%的子阵列面积和2倍的位线激活功率,而不会影响性能。该架构采用IBM的32nm High-K/Metal SOI嵌入式DRAM技术实现。硬件结果证实了1.8ns随机周期和2倍改进的保留特性与优化的模拟参考调谐。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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