“S-shaped” negative differential conductivity of high gain GaAs photoconductive switches

2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics Pub Date : 2009-10-30 DOI:10.1109/CLEOPR.2009.5292628

Hong Liu, C. Ruan

引用次数: 1

Abstract

The formation of the “S-shaped” negative differential conductivity (NDC) of high gain GaAs photoconductive semiconductor switches (PCSS) is qualitatively analyzed. The development of NDC is characterized by localized direct transform from N-shaped to S-shaped NDC.

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高增益砷化镓光导开关的“s形”负差分电导率

定性分析了高增益砷化镓光导半导体开关(PCSS)“s”形负差分电导率(NDC)的形成。NDC发展的特点是由n形NDC向s形NDC局部直接转化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics

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