A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s

G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, G. Dambrine
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引用次数: 9

Abstract

An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation from 9 to 40 GHz is /spl plusmn/ 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.
一种50 GHz带宽、40 gbit /s低噪声的变质GaAs HEMT分布式放大器
一种具有12.5 dB /spl plusmn/ 0.45 dB增益和50 GHz带宽的8级分布式放大器已在商用的0.1 /spl mu/m变质GaAs HEMT (MHEMT)技术中得到验证。该放大器在带宽上的最小噪声系数低于2.5 dB。从9到40 GHz的组延迟变化为/spl plusmn/ 7.5 ps,电路消耗为0.4 W。该放大器已与高响应度光电二极管封装在光纤辫尾模块中。眼图测量证明了光电接收器的成功高速运行。
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