Single-Photon Detection by Cavity-Assisted All-Optical Gain

2018 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2018-12-18 DOI:10.1103/PhysRevB.99.205303

C. Panuski, M. Pant, M. Heuck, D. Englund

引用次数: 3

Abstract

Considering the free-carrier dispersion effect at the limit of a single photoexcited charge carrier pair suggests the possibility of realizing single-photon detection through a high-Q/V semiconductor cavity.

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基于腔辅助全光增益的单光子探测

考虑单光激电荷载流子对极限下的自由载流子色散效应，提出了通过高q /V半导体腔实现单光子探测的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 Conference on Lasers and Electro-Optics (CLEO)

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