A New Finding of Cu-Al IMC Corrosion and Investigation of Fluorine Contamination Influence on Cu-Al IMC Corrosion

M. Song, V. Mathew, L. Li, Sonder Wang, M. C. Han, Y. Song, Allen M. Descartin
{"title":"A New Finding of Cu-Al IMC Corrosion and Investigation of Fluorine Contamination Influence on Cu-Al IMC Corrosion","authors":"M. Song, V. Mathew, L. Li, Sonder Wang, M. C. Han, Y. Song, Allen M. Descartin","doi":"10.1109/ICEPT47577.2019.245230","DOIUrl":null,"url":null,"abstract":"Cu wire is widely used in the electronics industry for wire bond material for IC packages due to lower cost compared to Au wire. IC package miniaturization and increasing connection density are resulting in new challenges in terms of reliability and long-term stability. Harsher environments in automotive electronics also lead to several reliability issues. Corrosion effects, especially at Al/Cu wire bond interfaces are the interaction result of factors such as temperature, moisture, and biased electrical driving force with halides as the corrosion initiator. The influence of Cl (chlorine) on the interfacial corrosion of wire bond contacts is well known. Very small amounts of chlorine can result in Cu/Al corrosion and cause electrical open failures in humidity related stresses (e.g., HAST, Autoclave, THB, etc.). However, the influence of fluorine (F) on Cl induced corrosion is not as well understood. This paper introduces a new failure mechanism: Cl- induced IMC corrosion. In this mechanism, not only the IMC and Al pad but also the Cu corrodes. To understand the corrosion mechanism, the paper presents the first step in an initial investigation with the goal to get knowledge about whether F is a contributing factor in the Cu/Al corrosion process. An experimental study was done using three different wafers (a special wafer fabrication process to artificially generate different level of F contamination on the Al pads). Fluorine contamination was characterized on the bonding pads by AES (Auger Electron Spectroscopy) then the wafers were assembled into packages and then tested using THB (Temperature Humidity Biased) stress. Final test after THB stress was the major response for the experiment. The result shows that the level of F contamination studied not sufficient to show the impact. Further study is needed for higher levels of fluorine contamination. However, fluorine contamination should still be well controlled and monitored in Cu wire bonded package because it may worsen the wire bond performance potentially impacting wire bond robustness against corrosion.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT47577.2019.245230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Cu wire is widely used in the electronics industry for wire bond material for IC packages due to lower cost compared to Au wire. IC package miniaturization and increasing connection density are resulting in new challenges in terms of reliability and long-term stability. Harsher environments in automotive electronics also lead to several reliability issues. Corrosion effects, especially at Al/Cu wire bond interfaces are the interaction result of factors such as temperature, moisture, and biased electrical driving force with halides as the corrosion initiator. The influence of Cl (chlorine) on the interfacial corrosion of wire bond contacts is well known. Very small amounts of chlorine can result in Cu/Al corrosion and cause electrical open failures in humidity related stresses (e.g., HAST, Autoclave, THB, etc.). However, the influence of fluorine (F) on Cl induced corrosion is not as well understood. This paper introduces a new failure mechanism: Cl- induced IMC corrosion. In this mechanism, not only the IMC and Al pad but also the Cu corrodes. To understand the corrosion mechanism, the paper presents the first step in an initial investigation with the goal to get knowledge about whether F is a contributing factor in the Cu/Al corrosion process. An experimental study was done using three different wafers (a special wafer fabrication process to artificially generate different level of F contamination on the Al pads). Fluorine contamination was characterized on the bonding pads by AES (Auger Electron Spectroscopy) then the wafers were assembled into packages and then tested using THB (Temperature Humidity Biased) stress. Final test after THB stress was the major response for the experiment. The result shows that the level of F contamination studied not sufficient to show the impact. Further study is needed for higher levels of fluorine contamination. However, fluorine contamination should still be well controlled and monitored in Cu wire bonded package because it may worsen the wire bond performance potentially impacting wire bond robustness against corrosion.
Cu-Al IMC腐蚀的新发现及氟污染对Cu-Al IMC腐蚀影响的研究
与金线相比,铜线的成本较低,因此被广泛用于电子工业中IC封装的线键材料。集成电路封装小型化和连接密度的增加对可靠性和长期稳定性提出了新的挑战。恶劣的汽车电子环境也导致了一些可靠性问题。以卤化物为引发剂的温度、湿度和偏置电驱动力等因素共同作用,导致了铝/铜线结合界面的腐蚀效应。Cl(氯)对线键接触界面腐蚀的影响是众所周知的。极少量的氯会导致Cu/Al腐蚀,并导致与湿度相关的应力(例如,HAST,高压釜,THB等)中的电气打开故障。然而,氟(F)对氯致腐蚀的影响尚不清楚。本文介绍了一种新的失效机制:Cl- IMC腐蚀。在这一机制下,除了IMC和Al衬垫外,铜也会发生腐蚀。为了了解腐蚀机理,本文提出了初步研究的第一步,目的是了解F是否是Cu/Al腐蚀过程的促成因素。实验研究使用了三种不同的晶圆(一种特殊的晶圆制造工艺,人为地在Al衬垫上产生不同程度的F污染)。采用AES(俄歇电子能谱)对焊盘上的氟污染进行了表征,然后将晶圆组装成封装,然后使用THB(温度湿度偏置)应力对其进行了测试。THB应激后的最终测试是实验的主要反应。结果表明,所研究的氟污染水平不足以显示其影响。需要对更高水平的氟污染进行进一步研究。然而,由于氟污染可能会使焊线性能恶化,从而影响焊线抗腐蚀的稳健性,因此在铜焊线封装中仍应很好地控制和监测氟污染。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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