Fabrication And Characterization Of A P-N Junction For Large Area Silicon Solar Cell

Abstract

A solar cell is basically a p-n junction that generates current upon the incidence of solar radiation. The property of a solar cell is strongly influenced by the electrical properties of the junction and the optical property of the n-type surface, which is fabricated by a process called diffusion. In this paper, we report the chemical processing and fabrication of a pn junction on a large area P-type silicon wafer at three different temperatures $850^{\circ}\mathrm{C}, 875^{\circ}\mathrm{C},\ \mathrm{and}\ 900^{\circ}\mathrm{C}$ using POCl3 as a precursor gas. After each step of processing, the wafers were subjected to optical, electrical, and morphological characterization. It has been found that the reflectance as well as the morphology of the wafers not only changes with chemical processing but also with doping temperature as well. Moreover, Hall-effect measurement for carrier type and concentration as well as I-V characterization of the doped wafers confirms the formation of a p-n junction.