Evaluation of Schottky barrier parameters of Al Schottky contacts on platinum doped n-silicon

Abstract

The current-voltage (I-V) and capacitance-voltage (C-V) measurements of Aluminum (Al) Schottky contacts on undoped and platinum-doped NTD n-Silicon were carried out in the temperature range of 300-420 K. The I-V and C-V characteristics were used to extract the saturation current, the ideality factor and the Schottky barrier height of the diodes. These parameters were correlated to the defect levels generated by the Pt in silicon. The results show that the saturation current of Pt doped diode is reduced and the Schottky barrier height of the diode is higher than from that of the diodes fabricated on undoped silicon diodes. This high value of the Schottky barrier height shows that Pt in silicon creates donor levels in the energy gap that compensate electrons to reduce the conductivity of the material. Such the Pt doped diodes have been found to perform better as low loss rectifiers due to there have less leakage current than undoped devices.