Simulation of HgI2 semiconductor detectors by a Monte Carlo method

Abstract

A Monte Carlo program has been developed to simulate the γ-ray spectral response of semiconductor detectors. Calculations have been carried out for HgI₂. Photons in the range from 5 keV to 1 MeV are considered as emitted from a source of zero thickness aligned to the crystal axis and followed until their complete energy loss of their escape from the crystal. The program allows the optimization of important parameters in a semiconductor detector, the study of their influence on the spectra obtained and the determination of performance parameters, such as energy resolution and efficiency. Some results have been compared with experimental data.