Tuning Magnetic Properties of Thick CoFeB Film by Interlayer Coupling in Trilayer Structured Thin Films

Anabil Gayen, J. Aroutchelvane, K. Umadevi, P. Alagarsamy
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引用次数: 3

Abstract

This study deals with tuning magnetic properties of a thick amorphous (a-)Co20Fe60B20 (CoFeB262) film by using interlayer magnetic coupling in trilayer structured films of [CoFeB262 (100 nm)/[Cr,Ta (x nm)]/CoFeB262 (y nm)] with y=2-50, xCr=0.75, 2 and xTa=1, 4. All the films are deposited directly on thermally oxidized Si substrate at ambient temperature using magnetron sputtering. The as-deposited a-CoFeB262 (100 nm) film exhibits magnetic stripe domain and transcritical hysteresis loop due to large effective magnetic anisotropy caused by stress induced during deposition of the films. On the other hand, the shape of magnetic hysteresis (M-H) loops in trilayer films transforms from transcritical to rectangular shaped one with enhanced remanence ratio (MR/MS) of ≥ 75% and single magnetization reversal behavior. This effectively reduces coercivity (HC) and field required to saturate magnetization (HS) in trilayer films. However, the changes in the loop shape and reductions in HC and HS depend strongly on x and y. Magnetic domain images obtained using Kerr microscopy in trilayer films show a rapid switching of large-sized domains along easy-axis and weak ripple domains along hard-axis. In addition, the magnetization reversal behavior along the hard-axis strongly depends on x(Cr,Ta). M-H loops obtained at different temperatures between 30 K and 300 K reveal no change in loop shape for trilayer films with small x and y, while the disappearance of shearing and formation of additional steps at low temperatures are observed for films with large x and y. The observed results are explained on the basis of change in interlayer coupling between CoFeB262 layers with x, y and temperature. Furthermore, these results clearly confirm that the magnetic properties of thick CoFeB262 film with stripe domain can easily be tuned into in-plane magnetization by this simple trilayer structured thin films.
用三层结构薄膜的层间耦合调谐厚CoFeB薄膜的磁性能
本文研究了在[CoFeB262 (100 nm)/[Cr,Ta (x nm)]/CoFeB262 (y nm)] (y =2-50, xCr=0.75, 2, xTa= 1,4)的三层结构薄膜中,利用层间磁耦合对厚非晶(a-)Co20Fe60B20 (CoFeB262)薄膜的磁性能进行调谐。所有薄膜都是在室温下用磁控溅射直接沉积在热氧化的Si衬底上的。沉积的a-CoFeB262 (100 nm)薄膜由于在沉积过程中应力诱导产生较大的有效磁各向异性,呈现出磁条畴和跨临界磁滞回线。另一方面,三层膜中的磁滞环(M-H)由跨临界形状转变为矩形形状,剩磁比(MR/MS)增强≥75%,具有单磁化反转行为。这有效地降低了三层薄膜的矫顽力(HC)和饱和磁化(HS)所需的场。然而,环路形状的变化以及HC和HS的减少强烈依赖于x和y。利用Kerr显微镜在三层薄膜中获得的磁畴图像显示,大尺寸畴沿易轴和弱纹波畴沿硬轴快速切换。此外,沿硬轴的磁化反转行为强烈依赖于x(Cr,Ta)。在30 K和300 K之间的不同温度下得到的M-H环显示,x和y较小的三层膜的环形状没有变化,而x和y较大的三层膜在低温下观察到剪切消失和附加步骤的形成。观察到的结果是基于CoFeB262层间耦合随x、y和温度的变化。此外,这些结果清楚地证实了这种简单的三层结构薄膜可以很容易地将具有条纹畴的CoFeB262厚膜的磁性调谐到面内磁化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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