Features of High Current Nanosecond Discharge in Mixture of High Pressure CuInSe2 Chalkopyrite Vapor and Argon

Abstract

The features of an over-voltage high-current nanosecond discharge in argon of high pressure (р=202 kPa) ignited between the electrodes of CuInSe2 compound are presented. In the sputtering of massive chalcopyrite electrodes, the CuInSe2 pair gets into the discharge plasma. Main products of dissociation of chalcopyrite molecules in the over-voltage nanosecond discharge are established. They were in excited and ionized states and in the spectra of plasma radiation they were predominantly represented by atoms and single charged ions of copper and indium. It is proposed to use the spectral lines of copper and indium to control the process of thin films of chalcopyrite deposition in a real time. Using gas-discharge method thin films of chalcopyrite are synthesized on quartz substrates. These films effectively absorb the radiation falling on their surface in the spectral range of 200-800 nm. This property opens the prospects for their application in photovoltaic devices.