{"title":"Filling through-silicon vias with conductive ferromagnetic silver-iron composite","authors":"C. Lu, Kerwin Wang","doi":"10.1109/NEMS.2014.6908828","DOIUrl":null,"url":null,"abstract":"This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"23 1","pages":"366-369"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2014.6908828","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.