Filling through-silicon vias with conductive ferromagnetic silver-iron composite

C. Lu, Kerwin Wang
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Abstract

This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.
用导电铁磁银铁复合材料填充硅通孔
介绍了一种新型铁磁复合材料的磁致注入制备导电硅通孔的方法。通过吸引磁力填充导电铁磁性复合材料。这种复合材料是由银和铁纳米粒子的混合物制成的。SU-8 2002通过低真空吸盘作为绝缘材料覆盖在通孔侧壁上。经热固化处理后,介质层的电场可高达5×106 V/cm。所有的制造步骤都在100℃以下完成,tsv可以允许电流密度为6×107 a /m2。在50v时漏电流为2×10-6 A。直流电烧结后,各TSV的电阻均小于0.85 Ω。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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