Thermoelectric power of p-doped PbTe semiconductor microwires with resonant states of thallium impurities

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Teatro e Storia Pub Date : 2005-12-19 DOI:10.1109/SMICND.2005.1558779

E. Zasavitsky, V. Kantser, D. Meglei

引用次数: 1

Abstract

Results of the measurements of thermoelectric properties of thin semiconductor microwires of Pb1-xTlxTe (x=0.001divide0.02, d=5-100 mum) in the temperature region 4.2divide300 K, which were obtained from solution melt by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium 0.0025

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掺磷PbTe半导体微线与铊杂质共振态的热电功率

本文介绍了用石英毛细管填充结晶材料制备的Pb1-xTlxTe薄半导体微线(x=0.001divide0.02, d=5-100 mum)在4.2 ~ 300 K温度范围内的热电性能测量结果。对于化学成分中铊浓度为0.0025

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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