TCAD simulation of the nitrogen effect by NO-nitrided oxide

Abstract

Anomalous short channel characteristics in NO-nitrided gate oxide device were investigated in this paper. In NMOS, the NO-nitrided gate oxide device has less reverse short-channel effect with lower threshold voltage than pure gate oxide device. On the other hand, the opposite case is seen for PMOS. These characteristics are attributed to the boron dose loss in surface region by NO-nitrided oxidation in SIMS analysis. By these results, we can apply nitrogen effect by NO-nitrided oxide to the simulation using interface trap model in TSUPREM-4. We can optimize the NO anneal condition of 0.18 /spl mu/m technology by simulation.