IDDQ testing in low power supply CMOS circuits

C. Tong, M. Wen, S. Su
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引用次数: 1

Abstract

The I/sub DDQ/ current testing for low power circuits is investigated. Two examples of low power circuits are considered. One involves strictly a decrease in supply voltage, the other reduces supply voltage simultaneously with a scaling down of transistor parameters. Based on the theoretical and simulation results, the gap between faulty I/sub DDQ/ and fault-free I/sub DDQ/ can be seen to decrease in low power supply circuits. For I/sub DDQ/ testing to be effective, the gap should be discriminative. A method of partitioning is provided to solve this problem.
低功耗CMOS电路中的IDDQ测试
研究了低功耗电路的I/sub DDQ/电流测试方法。考虑了两个低功耗电路的例子。一种是严格地降低电源电压,另一种是在降低晶体管参数的同时降低电源电压。从理论和仿真结果可以看出,在低功耗电路中,故障I/sub DDQ/与无故障I/sub DDQ/之间的差距减小了。为了使I/sub DDQ/测试有效,差距应该是有区别的。提出了一种分区方法来解决这一问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
3.80
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0.00%
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0
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