{"title":"Class-E rectifiers and power converters","authors":"J. A. García, Z. Popovic","doi":"10.1109/MWSYM.2017.8058856","DOIUrl":null,"url":null,"abstract":"This paper reviews the use of the class-E topology for RF-to-DC and DC-to-DC power conversion. After covering its early history, the class-E rectifier is introduced in the context of the time-reversal duality principle, to be then integrated with an inverter in a class-E2 DC/DC converter. Recent examples and applications at UHF and microwave bands are finally presented. A review of RF rectifiers based on Schottky diodes or FET transistors, is followed by a discussion of synchronous and self-synchronous implementations of the double class-E DC/DC converter, using advanced GaN HEMT transistors.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"49 1","pages":"1327-1330"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2017.8058856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
This paper reviews the use of the class-E topology for RF-to-DC and DC-to-DC power conversion. After covering its early history, the class-E rectifier is introduced in the context of the time-reversal duality principle, to be then integrated with an inverter in a class-E2 DC/DC converter. Recent examples and applications at UHF and microwave bands are finally presented. A review of RF rectifiers based on Schottky diodes or FET transistors, is followed by a discussion of synchronous and self-synchronous implementations of the double class-E DC/DC converter, using advanced GaN HEMT transistors.