Probing charge carriers in semiconductor quantum dots by terahertz spectroscopy

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS. Pub Date : 2003-06-06 DOI:10.1109/QELS.2003.237916

Fei Wang, M. Bonn, J. Shan, M.A. Islam, I. Herman, T. Heinz

引用次数: 0

Abstract

The terahertz response of photo-excited charge carriers in CdSe quantum dots has been studied. Quantum dots containing a single electron-hole pair exhibit a real polarizability with a magnitude exceeding 10000 /spl Aring//sup 3/.

查看原文本刊更多论文

用太赫兹光谱探测半导体量子点中的载流子

研究了CdSe量子点中光激发载流子的太赫兹响应。含有单个电子-空穴对的量子点表现出超过10000 /spl量级的真实极化率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.

自引率

0.00%

发文量