Preparation and characterisation of NiMn2O4 films

R. Schmidt, A.W. Brinkman
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引用次数: 33

Abstract

Thin films of NiMn2O4 NTC thermistor material were produced by electron-beam-evaporation from phase pure NiMn2O4 source material. The films were characterised using SEM, EDAX, XRD and an Alpha-Step stylus profileometer. Resistance vs. temperature characteristics were obtained over a wide range of temperature and suggested that the conduction mechanism was by variable range hopping. A theoretical model for the thickness profile of the films was derived and comparison of theory with experimental findings showed good agreement.

NiMn2O4薄膜的制备与表征
以相纯NiMn2O4为原料,采用电子束蒸发法制备了NiMn2O4 NTC热敏电阻材料薄膜。采用SEM, EDAX, XRD和Alpha-Step手写轮廓仪对薄膜进行了表征。在较宽的温度范围内获得了电阻与温度的特性,并表明导电机制是通过变范围跳变。推导了薄膜厚度分布的理论模型,并与实验结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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