Action of current on ferrimagnetic domain wall: 2 propagation regimes in creep and influence of domain wall structure.

E. Haltz, J. Sampaio, R. Weil, Y. Dumont, A. Mougin
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The analytical $\\mathrm {q}- \\varphi $ model of DW motion along 1D wire shows that DW motion induced just by field or just by STT exhibits 2 different DW propagation regimes [3]. For low field or low current (low u), the DW moves steadily with just a tilt of its central magnetisation. This regime is called translational regime. For stronger field or current (strong u), the DW moves with a continuous precession of its central magnetisation. This regime is called precessional regime. In both regimes, speeds are proportional to H or u. The 2 regimes are separated by a critical field (or critical current) called Walker field (or current). Since the velocity is linear with H or u, it is possible to convert a current density acting on the DW into an equivalent field Heq defined as the field necessary to induce the same macroscopic velocity as the current density. In this equivalent field approach, Heq is proportional to u, with a proportionality constant for each regime. In classical ferromagnetic materials that have been mostly studied, P and Ms have the same physical origin and thermal dependence. Therefore, for those materials, the ratio P/ Ms entering u which governs efficiency of STT is fixed. To play with P/ Ms, we focused on more exotic materials namely Rare Earth/ Transition Metal (RETM) ferrimagnetics alloys [4] in which it is possible to tune independently Ms or P by composition or temperature. Indeed, in RETM, two populations of magnetic moments are antiferromagnetically coupled: 3d TM moments are antiparallel to 5d and localised 4f RE moments. The alloys net magnetisation is the difference of moments of the 2 populations whereas spin polarisation P arises only from that of RE and TM conduction electrons. We measured amorphous ferrimagnetic TbFe alloys thin films grown by coevaporation. They exhibit perpendicular magnetic anisotropy and P and Ms have clearly different thermal dependence (Fig 1a). The propagation of DWs in TbFe microtracks was analysed using Kerr microscopy. In a first step, we measured the velocity under continuous field (without current pulses) at different temperatures. We observed a nonlinear behaviour of velocity versus field and a strong dependence with temperature (Fig 1b). This type of DW dynamic is called creep regime. In this regime, the DWM is characterised by discrete hopping of the DW between weak pinning centres acting collectively and the DW velocity is described by an Arrhenius law. The energy barrier to overcome by thermal activation depends on the applied field H weighted by a universal exponent $(\\mu = -1/4)$ that describes the motion of 1D elastic system in 2D random disorder media [5]. Fig 2a illustrates our original results demonstrating Current Induced DW Motion in TbFe wires under combined field and current and Fig 1c shows DW velocities for a few current densities. Two main observations can be done. The STT-like action pushes DWs along the electrons flow and can add or substract to the field action: a signature of STT is the increase of the split between fast (up-triangle) and slow (down-triangle) DWs. Joule heating modifies the creep dynamic and makes DWMs easier in both directions: the mean speed increases. A very careful analysis of the creep velocity was performed taking into account field, current and temperature versus time. We could evaluate Joule heating and the current contribution in terms of equivalent field Heq. In Fig 2b, Heq is reported versus current density (J) and clearly presents 2 regimes. Heq is not proportional to J P/Ms over the entire range (dashed line - material parameters from Fig 1a), as expected in conventional STT [3]. Based on an extended $\\mathrm {q}- \\varphi 1\\mathrm {D}$ model, we describe two regimes separated by a Walker-like threshold above which the CIDWM is more efficient, maybe thanks to changes of DW structure such as the creation of Néel lines [6].","PeriodicalId":6571,"journal":{"name":"2018 IEEE International Magnetic Conference (INTERMAG)","volume":"28 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Magnetic Conference (INTERMAG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTMAG.2018.8508167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The possibility of manipulating magnetic domain walls (DWs) using electrical current is very attractive for magnetic devices that store and process non-volatile information [1]. To estimate the efficiency of current acting on a magnetic texture (by Spin Transfer Torque for instance), the relevant quantity is a drift speed $\mathrm {u}=( \mathrm {g}\mu _{B}\mathrm {P}) /$(2eMs) J where J is the current density, P its spin polarisation in the magnetic media, Ms the net magnetisation, g the Landé factor, $\mu _{B}$ the Bohr magneton, e the electron charge [2]. The analytical $\mathrm {q}- \varphi $ model of DW motion along 1D wire shows that DW motion induced just by field or just by STT exhibits 2 different DW propagation regimes [3]. For low field or low current (low u), the DW moves steadily with just a tilt of its central magnetisation. This regime is called translational regime. For stronger field or current (strong u), the DW moves with a continuous precession of its central magnetisation. This regime is called precessional regime. In both regimes, speeds are proportional to H or u. The 2 regimes are separated by a critical field (or critical current) called Walker field (or current). Since the velocity is linear with H or u, it is possible to convert a current density acting on the DW into an equivalent field Heq defined as the field necessary to induce the same macroscopic velocity as the current density. In this equivalent field approach, Heq is proportional to u, with a proportionality constant for each regime. In classical ferromagnetic materials that have been mostly studied, P and Ms have the same physical origin and thermal dependence. Therefore, for those materials, the ratio P/ Ms entering u which governs efficiency of STT is fixed. To play with P/ Ms, we focused on more exotic materials namely Rare Earth/ Transition Metal (RETM) ferrimagnetics alloys [4] in which it is possible to tune independently Ms or P by composition or temperature. Indeed, in RETM, two populations of magnetic moments are antiferromagnetically coupled: 3d TM moments are antiparallel to 5d and localised 4f RE moments. The alloys net magnetisation is the difference of moments of the 2 populations whereas spin polarisation P arises only from that of RE and TM conduction electrons. We measured amorphous ferrimagnetic TbFe alloys thin films grown by coevaporation. They exhibit perpendicular magnetic anisotropy and P and Ms have clearly different thermal dependence (Fig 1a). The propagation of DWs in TbFe microtracks was analysed using Kerr microscopy. In a first step, we measured the velocity under continuous field (without current pulses) at different temperatures. We observed a nonlinear behaviour of velocity versus field and a strong dependence with temperature (Fig 1b). This type of DW dynamic is called creep regime. In this regime, the DWM is characterised by discrete hopping of the DW between weak pinning centres acting collectively and the DW velocity is described by an Arrhenius law. The energy barrier to overcome by thermal activation depends on the applied field H weighted by a universal exponent $(\mu = -1/4)$ that describes the motion of 1D elastic system in 2D random disorder media [5]. Fig 2a illustrates our original results demonstrating Current Induced DW Motion in TbFe wires under combined field and current and Fig 1c shows DW velocities for a few current densities. Two main observations can be done. The STT-like action pushes DWs along the electrons flow and can add or substract to the field action: a signature of STT is the increase of the split between fast (up-triangle) and slow (down-triangle) DWs. Joule heating modifies the creep dynamic and makes DWMs easier in both directions: the mean speed increases. A very careful analysis of the creep velocity was performed taking into account field, current and temperature versus time. We could evaluate Joule heating and the current contribution in terms of equivalent field Heq. In Fig 2b, Heq is reported versus current density (J) and clearly presents 2 regimes. Heq is not proportional to J P/Ms over the entire range (dashed line - material parameters from Fig 1a), as expected in conventional STT [3]. Based on an extended $\mathrm {q}- \varphi 1\mathrm {D}$ model, we describe two regimes separated by a Walker-like threshold above which the CIDWM is more efficient, maybe thanks to changes of DW structure such as the creation of Néel lines [6].
电流对铁磁畴壁的作用:蠕变中的两种传播方式及畴壁结构的影响。
利用电流操纵磁畴壁(DWs)的可能性对于存储和处理非易失性信息的磁性器件非常有吸引力。为了估计作用在磁性结构上的电流的效率(例如,通过自旋传递扭矩),相关的量是漂移速度$\mathrm {u}=( \mathrm {g}\mu _{B}\mathrm {P}) /$ (2eMs) J,其中J是电流密度,P是其在磁性介质中的自旋极化,Ms是净磁化,g是朗德因子,$\mu _{B}$是玻尔磁子,e是电子电荷[2]。DW沿1D导线运动的解析$\mathrm {q}- \varphi $模型表明,仅由场或仅由STT引起的DW运动表现出两种不同的DW传播方式[3]。对于低场或低电流(低u), DW仅以其中心磁化的倾斜稳定移动。这种状态被称为平动状态。对于更强的磁场或电流(强u), DW随着其中心磁化的连续进动而移动。这种状态被称为岁差状态。在这两种情况下,速度都与H或u成正比。这两种情况被一个称为沃克场(或电流)的临界场(或临界电流)分开。由于速度与H或u成线性关系,因此可以将作用在DW上的电流密度转换为等效场Heq, Heq定义为产生与电流密度相同的宏观速度所需的场。在这种等效场方法中,Heq与u成正比,每个区域都有一个比例常数。在研究较多的经典铁磁材料中,P和Ms具有相同的物理来源和热依赖关系。因此,对于这些材料来说,决定STT效率的P/ Ms进入u的比率是固定的。为了发挥P/ Ms,我们专注于更奇特的材料,即稀土/过渡金属(RETM)铁磁合金[4],其中可以根据成分或温度独立调整Ms或P。事实上,在RETM中,两个磁矩群是反铁磁耦合的:3d TM矩与5d和局部4f RE矩反平行。合金的净磁化是两个居群的矩之差,而自旋极化P仅由RE和TM传导电子的自旋极化产生。我们测量了用共蒸发法生长的非晶铁磁tfe合金薄膜。它们具有垂直的磁各向异性,P和Ms具有明显不同的热依赖性(图1a)。用克尔显微镜分析了DWs在tfe微轨中的繁殖情况。在第一步中,我们测量了不同温度下连续场(无电流脉冲)下的速度。我们观察到速度对场的非线性行为以及与温度的强烈依赖(图1b)。这种类型的DW动态称为蠕变状态。在这种情况下,DWM的特征是弱钉住中心之间的离散跳变,并且DW速度由Arrhenius定律描述。通过热激活克服的能量势垒取决于应用场H,该场H由描述二维随机无序介质[5]中一维弹性系统运动的通用指数$(\mu = -1/4)$加权。图2a显示了我们的原始结果,显示了在磁场和电流联合作用下,tfe导线中电流诱导的DW运动,图1c显示了几种电流密度下的DW速度。可以做两个主要的观察。类似STT的作用推动DWs沿着电子流,并可以增加或减少场作用:STT的一个特征是快速(上三角形)和慢速(下三角形)DWs之间的分裂增加。焦耳加热改变了蠕变动态,使dwm在两个方向上都更容易:平均速度增加。考虑到电场、电流和温度对时间的影响,对蠕变速度进行了非常仔细的分析。我们可以用等效场Heq来计算焦耳加热和电流的贡献。在图2b中,Heq与电流密度(J)的关系清晰地呈现出两种状态。在整个范围内(虚线-图1a中的材料参数),Heq与预期的传统STT[3]不成比例。基于扩展的$\mathrm {q}- \varphi 1\mathrm {D}$模型,我们描述了两个由Walker-like阈值分隔的制度,在此阈值之上,CIDWM更有效,这可能是由于DW结构的变化,例如nsamel线[6]的创建。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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