Optical Properties of Patterned InN in Photodetection Devices

Abstract

InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LPMOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 ˜1580 nm), and the portion photocurrent (920 nm long pass) exhibits 33° measured via AM1.5G solar simulated spectra.