Structures and electrical properties of Cu/Mo metallic multilayered films

Abstract

The authors have synthesised molybdenum/copper multilayered films by the alternate deposition of molybdenum and copper metals in an ultra-high vacuum (10-7 Pa). Sapphire (11.0) and Si(100) were used as the substrates and the substrate temperatures were 40, 80 and 200 degrees C. The films have been characterised by X-ray diffraction. It is revealed that the films had a textured structure with Mo(110)/Cu(111) stacking and that the average grain size perpendicular to the film was largest when the authors used the sapphire (11.0) substrate at 40 degrees C. They also measured the in-plane electrical resistivities of the films. The in-plane resistivity increased with inverse multilayer period, but not monotonically. The authors analysed these results by considering the scattering of electrons from the interfaces of the layers and the modifications of bulk relaxation times by the presence of the grain boundaries within layers.