Improvement of junction characteristics of ultra shallow junction with boron-cluster implantation and Ni-silicide for nano-scale CMOS technology

Abstract

In this study, thermal stability of Ni silicide on boron, BF2, and B18H22 implanted junctions is improved using Ni-Pd(5%) alloy target. The proposed Ni-Pd(5%)/TiN structure enabled the maintenance of low sheet resistance during the RTP and post silicidation annealing than conventional Ni/TiN structure. The improvement of Ni silicide properties is analyzed to be due to the formation of Pd2Si of which peaks were confirmed by XRD data, which indicates the reaction has substantially occurred during the RTP and post silicidation annealing. Moreover, it is also shown that the proposed Ni-Pd(5%)/TiN is efficient in reducing the reverse leakage current as well as improving the thermal stability of ultra shallow junction with B18H22 implantation.