Y.-H. Tak, S. Mang, A. Greiner, H. Bässler, S. Pfeiffer, H.-H. Hörhold
{"title":"Polythienylenevinylene as promoter of hole injection from ITO into bilayer light emitting diodes","authors":"Y.-H. Tak, S. Mang, A. Greiner, H. Bässler, S. Pfeiffer, H.-H. Hörhold","doi":"10.1002/actp.1997.010481006","DOIUrl":null,"url":null,"abstract":"<p>Due to the low oxidation potential of poly-(2,5-thienylenevinylene) (PTV) an ohmic contact for hole injection is established at an indium tin oxide (ITO)/PTV interface. It gives rise to space-charge-limited conduction in an ITO/PTV/Al diode. The ohmic nature of the ITO/PTV contact can be exploited to increase hole injection into multilayer organic light emitting diodes in which internal charge accumulation would otherwise lower majority carrier injection by virtue of electric field screening at the anode.</p>","PeriodicalId":7162,"journal":{"name":"Acta Polymerica","volume":"48 10","pages":"450-454"},"PeriodicalIF":0.0000,"publicationDate":"2003-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/actp.1997.010481006","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Acta Polymerica","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/actp.1997.010481006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Due to the low oxidation potential of poly-(2,5-thienylenevinylene) (PTV) an ohmic contact for hole injection is established at an indium tin oxide (ITO)/PTV interface. It gives rise to space-charge-limited conduction in an ITO/PTV/Al diode. The ohmic nature of the ITO/PTV contact can be exploited to increase hole injection into multilayer organic light emitting diodes in which internal charge accumulation would otherwise lower majority carrier injection by virtue of electric field screening at the anode.