Influence of Residual Transverse Magnetic Field on Sheath Expansion Process in Vacuum Interruption

Feiliang Hu, Shaoweihua Liu, Feng Liu, Hui Ma, Zhiyuan Liu, Yingsan Geng, Jing Peng, Xi Chen
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引用次数: 1

Abstract

The objective of this paper is to quantitatively determine the influence of the residual transverse magnetic field (TMF) on sheath expansion process after current interruption in vacuum. A two-dimensional (2D) particle-in-cell (PIC) model was adopted. The investigated residual TMF ranged from 0 to 300 mT. The simulation results showed that except an ion sheath existing in the sheath expansion period, there appeared an electron sheath, which is formed under the influence of the TMF. Moreover, when there is no residual TMF, the voltage drop mainly applied on the ion sheath. With the application of residual TMF, the voltage drop mainly applied on the electron sheath. Finally, residual TMF has a remarkable blows effect on the electrons. Few electrons diffused to the area between anode and shield under the influence of the residual TMF.
真空中断中残余横向磁场对护套膨胀过程的影响
本文的目的是定量确定真空中电流中断后残余横向磁场(TMF)对鞘层膨胀过程的影响。采用二维(2D)细胞内粒子(PIC)模型。所研究的残余TMF范围为0 ~ 300 mT。模拟结果表明,在鞘层膨胀期除了存在离子鞘层外,还存在电子鞘层,这是在TMF的影响下形成的。此外,当没有残余TMF时,电压降主要作用在离子鞘上。在残余TMF的作用下,电压降主要作用在电子护套上。最后,残余TMF对电子有显著的冲击效应。在残余TMF的影响下,很少有电子扩散到阳极和屏蔽之间的区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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