{"title":"Hexagonal rare earth (R=Eu-Dy) manganites: XRD study of epitaxially stabilized films","authors":"A.A. Bosak , C. Dubourdieu , J.-P. Sénateur , O.Yu. Gorbenko , A.R. Kaul","doi":"10.1016/S1463-0184(02)00047-3","DOIUrl":null,"url":null,"abstract":"<div><p><span>Epitaxial thin films of RMnO</span><sub>3</sub> (R=Sm, Eu, Gd, Dy) were prepared using liquid injection MOCVD and studied by XRD. The formation of high-temperature hexagonal polymorphic structure of DyMnO<sub>3</sub> and non-existing-as-bulk hexagonal EuMnO<sub>3</sub>, GdMnO<sub>3</sub> and SmMnO<sub>3</sub> (traces) was observed on ZrO<sub>2</sub>(Y<sub>2</sub>O<sub>3</sub><span>) (111) substrates at 900 °C due to epitaxial stabilization. For the thickness exceeding the critical one the oriented stable perovskite form grew on the hexagonal phase. Parallel deposition on perovskite or non-coherent substrates gave only the stable perovskite phase, epitaxially grown in the former case or oriented in the latter.</span></p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 355-364"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00047-3","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1463018402000473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
Epitaxial thin films of RMnO3 (R=Sm, Eu, Gd, Dy) were prepared using liquid injection MOCVD and studied by XRD. The formation of high-temperature hexagonal polymorphic structure of DyMnO3 and non-existing-as-bulk hexagonal EuMnO3, GdMnO3 and SmMnO3 (traces) was observed on ZrO2(Y2O3) (111) substrates at 900 °C due to epitaxial stabilization. For the thickness exceeding the critical one the oriented stable perovskite form grew on the hexagonal phase. Parallel deposition on perovskite or non-coherent substrates gave only the stable perovskite phase, epitaxially grown in the former case or oriented in the latter.