A low voltage 8.4 ppm/°C voltage reference based on subthreshold MOSFETs

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117666

Lixia Zheng, Jin Wu, Xia Zhao

引用次数: 0

Abstract

A CMOS voltage reference based on subthreshold operation is proposed. The current mirror mismatch error resulting from the channel length modulation effect is improved by using a self-cascode operational amplifer. The reference generates a constant reference voltage of 639 mV at supply voltage of 1.2V with power consumption of 18uW at room temperature fabricated in CSMC 0.18um CMOS technology. It achieves a temperature coefficient of 8.4ppm/°C for the temperature range from •20 °C to 120 °C

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基于亚阈值mosfet的低电压8.4 ppm/°C电压基准

提出了一种基于亚阈值运算的CMOS电压基准电路。采用自级联码运算放大器，改善了由信道长度调制效应引起的电流镜像失配误差。该基准在电源电压为1.2V时产生恒定的参考电压639 mV，室温下功耗为18w，采用CSMC 0.18um CMOS技术制造。在•20°C至120°C的温度范围内，温度系数为8.4ppm/°C

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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