Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode

Abstract

The present investigation describes the preparation and electrical characterization of CdS 1-x Se x based thin film Schottky diode. The formed single Schottky barrier shows characteristics comparable to the barrier formed by change in chemical composition. The thin films were prepared by vacuum thermal evaporation method under the pressure 2 × 10 -5 torr. I-V characteristics shows that the Cu makes Schottky contact with N-type CdS 1-x Se x thin film. The variation of junction current with voltage has been studied to evaluate the Schottky barrier height (ф B ). The ideality factor (η) of grown Schottky diodes was found near to ideality.