FEA Calculations for Ultra Thin Piezoresistive Pressure Sensor on SOI for Heatspreader Integration

B. Bercu, L. Montès, P. Morfouli
{"title":"FEA Calculations for Ultra Thin Piezoresistive Pressure Sensor on SOI for Heatspreader Integration","authors":"B. Bercu, L. Montès, P. Morfouli","doi":"10.1109/ESIME.2006.1643958","DOIUrl":null,"url":null,"abstract":"The objective of this contribution is the optimization of the response of a piezoresistive pressure sensor integrated into a heat spreader for microelectronic applications. Finite element analysis (FEA) calculations are employed to simulate the sensor behavior taking into account mechanical, thermal and electrical effects. The small sensors membrane area (150times150mum2) imposed by the heat spreader geometry, requires the use of an ultra thin membrane (thickness less than 1mum) for an optimal sensitivity. SOI technology is used in order to insure a better uniformity over the wafer. A double-side oxidized membrane configuration is analyzed in order to reduce the effects of the residual stress present in the membrane","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"1 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"微纳电子与智能制造","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ESIME.2006.1643958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

The objective of this contribution is the optimization of the response of a piezoresistive pressure sensor integrated into a heat spreader for microelectronic applications. Finite element analysis (FEA) calculations are employed to simulate the sensor behavior taking into account mechanical, thermal and electrical effects. The small sensors membrane area (150times150mum2) imposed by the heat spreader geometry, requires the use of an ultra thin membrane (thickness less than 1mum) for an optimal sensitivity. SOI technology is used in order to insure a better uniformity over the wafer. A double-side oxidized membrane configuration is analyzed in order to reduce the effects of the residual stress present in the membrane
用于散热器集成的SOI超薄压阻压力传感器的有限元计算
本贡献的目标是优化集成到微电子应用的热扩散器中的压阻式压力传感器的响应。采用有限元分析(FEA)计算模拟传感器的力学、热学和电学效应。小传感器膜面积(150倍150mum2)由散热器几何形状施加,需要使用超薄膜(厚度小于1mum)以获得最佳灵敏度。采用SOI技术是为了确保晶圆上的均匀性。分析了一种双面氧化膜结构,以减少膜中残余应力的影响
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