A new two-dimensional material: Phosphorene

Yuerui Lu
{"title":"A new two-dimensional material: Phosphorene","authors":"Yuerui Lu","doi":"10.1109/IMWS-AMP.2015.7324968","DOIUrl":null,"url":null,"abstract":"Summary form only given. Phosphorene [1,2] is a new family member of two dimensional materials. We observed strong and highly layer dependent photoluminescence in few-layer phosphorene (two to five layers) (Fig. 1). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscopy or scanning tunneling microscopy. Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene [3]. Two-dimensional (2D) layered materials, including semi-metallic graphene, semiconducting transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (hBN), have been heavily investigated in past decade. Compared with the gapless graphene, most recently investigated TMD semiconductor MoS2 has energy gap in the range of 1.3 eV (bulk) to 1.8 eV (monolayer). MoS2, an indirect band gap material in its bulk form, becomes a direct band gap semiconductor when thinned to a monolayer, enabling significantly enhanced photoluminescence in monolayer MoS2. Black phosphorous (termed as phosphorene) has become a new class of 2D layered material, with predicted layer-dependent band gap ranging from 0.3 eV (bulk) to 1.5 eV (monolayer). Particularly, few-layer phosphorene with narrow band gaps ranging from mid-infrared to near-infrared wavelengths can fill the space between the gapless graphene and the comparably large gap TMD semiconductors. The predicted direct band gap nature in few-layer phosphorene will also enable high-performance optoelectronic devices, compared with the indirect band gap behavior in most few-layer TMD semiconductors. However, so far there has been very little experimental data to confirm the theoretical prediction in few-layer phosphorene.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"40 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2015.7324968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Summary form only given. Phosphorene [1,2] is a new family member of two dimensional materials. We observed strong and highly layer dependent photoluminescence in few-layer phosphorene (two to five layers) (Fig. 1). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscopy or scanning tunneling microscopy. Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene [3]. Two-dimensional (2D) layered materials, including semi-metallic graphene, semiconducting transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (hBN), have been heavily investigated in past decade. Compared with the gapless graphene, most recently investigated TMD semiconductor MoS2 has energy gap in the range of 1.3 eV (bulk) to 1.8 eV (monolayer). MoS2, an indirect band gap material in its bulk form, becomes a direct band gap semiconductor when thinned to a monolayer, enabling significantly enhanced photoluminescence in monolayer MoS2. Black phosphorous (termed as phosphorene) has become a new class of 2D layered material, with predicted layer-dependent band gap ranging from 0.3 eV (bulk) to 1.5 eV (monolayer). Particularly, few-layer phosphorene with narrow band gaps ranging from mid-infrared to near-infrared wavelengths can fill the space between the gapless graphene and the comparably large gap TMD semiconductors. The predicted direct band gap nature in few-layer phosphorene will also enable high-performance optoelectronic devices, compared with the indirect band gap behavior in most few-layer TMD semiconductors. However, so far there has been very little experimental data to confirm the theoretical prediction in few-layer phosphorene.
一种新的二维材料:磷烯
只提供摘要形式。磷烯[1,2]是二维材料家族的新成员。我们观察到少层磷烯(2至5层)具有强烈且高度层依赖性的光致发光(图1)。结果证实了理论预测,即少层磷烯具有直接且层敏感的带隙。我们还证明了在拉曼散射中,少层磷烯比石墨烯和二硫化钼对温度调制更敏感。少层磷烯的各向异性拉曼响应使我们能够使用光学方法快速确定晶体取向,而无需隧道电子显微镜或扫描隧道显微镜。我们的研究结果为研究少层磷烯的能带结构和激子性质提供了急需的实验信息[3]。二维(2D)层状材料,包括半金属石墨烯、半导体过渡金属二硫族化合物(TMDs)和绝缘六方氮化硼(hBN),在过去的十年中得到了大量的研究。与无间隙石墨烯相比,最近研究的TMD半导体MoS2的能隙在1.3 eV(体)到1.8 eV(单层)之间。二硫化钼是一种非直接带隙材料,当其薄化为单层时,就变成了一种直接带隙半导体,使得单层二硫化钼的光致发光能力显著增强。黑磷(被称为磷烯)已经成为一类新的二维层状材料,其预测的层相关带隙范围从0.3 eV(块状)到1.5 eV(单层)。特别是,中红外到近红外波段窄带隙的少层磷烯可以填补无隙石墨烯和较大隙TMD半导体之间的空间。与大多数低层TMD半导体的间接带隙行为相比,预测的少层磷烯的直接带隙性质也将实现高性能光电器件。然而,到目前为止,很少有实验数据来证实理论预测在少层磷二烯。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信