Reliability study of AlTi/TiW, polysilicon and ohmic contacts for piezoresistive pressure sensors applications

A. Andrei, C. Malhaire, S. Brida, D. Barbier
{"title":"Reliability study of AlTi/TiW, polysilicon and ohmic contacts for piezoresistive pressure sensors applications","authors":"A. Andrei, C. Malhaire, S. Brida, D. Barbier","doi":"10.1109/ICSENS.2004.1426374","DOIUrl":null,"url":null,"abstract":"This paper presents a study on the thermal drift and long term stability of AlTi (with a TiW diffusion barrier) metal lines, polysilicon gauges and metal on polysilicon contact resistances for piezoresistive pressure sensors operating in harsh environments. Test structures have been exposed at 150/spl deg/C for a cumulated time of almost six months. All metal lines structures show a relative resistance decrease of around 4/spl times/10/sup -3/. On the other hand, polysilicon resistivity variations were not observable except for a few samples that showed a relative increase up to 7/spl times/10/sup -3/. Polysilicon contact resistance showed no particular trend with aging time. The impact of these results on the overall sensor reliability has also been discussed.","PeriodicalId":20476,"journal":{"name":"Proceedings of IEEE Sensors, 2004.","volume":"57 1","pages":"1125-1128 vol.3"},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Sensors, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2004.1426374","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents a study on the thermal drift and long term stability of AlTi (with a TiW diffusion barrier) metal lines, polysilicon gauges and metal on polysilicon contact resistances for piezoresistive pressure sensors operating in harsh environments. Test structures have been exposed at 150/spl deg/C for a cumulated time of almost six months. All metal lines structures show a relative resistance decrease of around 4/spl times/10/sup -3/. On the other hand, polysilicon resistivity variations were not observable except for a few samples that showed a relative increase up to 7/spl times/10/sup -3/. Polysilicon contact resistance showed no particular trend with aging time. The impact of these results on the overall sensor reliability has also been discussed.
压阻式压力传感器中AlTi/TiW、多晶硅和欧姆触点的可靠性研究
本文研究了在恶劣环境下工作的压阻式压力传感器的AlTi(带有TiW扩散阻挡层)金属线、多晶硅表和金属对多晶硅接触电阻的热漂移和长期稳定性。测试结构已暴露在150/spl度/C下累计时间近6个月。所有金属线结构的相对电阻都降低了约4/spl倍/10/sup -3/。另一方面,除了少数样品显示相对增加了7/spl倍/10/sup -3/外,没有观察到多晶硅电阻率变化。多晶硅接触电阻随老化时间无明显变化趋势。这些结果对传感器整体可靠性的影响也进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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