An X-Band Robust GaN Low-Noise Amplifier MMIC with Sub 2 dB Noise Figure

Abstract

This paper presents a low-noise amplifier (LNA) operating between 8–11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 × 1.3 mm2 (3.6 mm2) the presented LNA is compact when compared to the state of the art. The circuit is realized using the $0.25 \mu\mathrm{m}$ Power GaN/SiC HEMT process by WIN Semiconductor.