Series-Resonance BiCMOS VCO with Phase Noise of -138dBc/Hz at 1MHz Offset from 10GHz and -190dBc/Hz FoM

Alessandro Franceschin, Domenico Riccardi, A. Mazzanti
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引用次数: 3

Abstract

The phase noise of oscillators limits the modulation Error Vector Magnitude (EVM) in wireless communications and the SNR in high-speed data converters. The issue is particularly critical in the wireless infrastructure for 5G and beyond, where base stations and backhaul transceivers need extremely low phase noise to support wide bandwidth and spectrally efficient modulation schemes at high carrier frequency. Given the supply voltage, the phase noise in LC oscillators is reduced by scaling down the inductance and increasing power consumption. However, the Q degradation with too-small inductors sets a lower bound on phase noise [1], [2]. To overcome this limit, oscillators evolved from a single-core to multicore topologies, where N oscillators are coupled to scale down phase noise by 10log(N). This concept was exploited with two cores [1] and then extended to four [2]–[4] and eight cores [5], giving ideally the phase-noise reduction of 3, 6, and 9dB, respectively. Nevertheless, mismatches between oscillators impair phase noise and penalize the figure of merit (FoM) [3]. Moreover, with the number of cores that grows exponentially, the extension of the approach for further phase-noise reduction is not practical.
系列谐振BiCMOS压控振荡器,相位噪声为-138dBc/Hz,与10GHz和-190dBc/Hz的FoM相差为1MHz
振荡器的相位噪声限制了无线通信中的调制误差矢量幅值(EVM)和高速数据转换器的信噪比。这个问题在5G及以后的无线基础设施中尤为重要,因为基站和回程收发器需要极低的相位噪声来支持高载波频率下的宽带和频谱高效调制方案。给定电源电压,通过减小电感和增加功耗来降低LC振荡器中的相位噪声。然而,电感过小的Q衰减设置了相位噪声的下界[1],[2]。为了克服这一限制,振荡器从单核拓扑发展到多核拓扑,其中N个振荡器耦合以将相位噪声降低10log(N)。这一概念在两个核心[1]中得到了利用,然后扩展到四个[2]-[4]和八个核心[5],分别给出了理想的3,6和9dB的相位噪声降低。然而,振荡器之间的不匹配会损害相位噪声,并降低优值(FoM)[3]。此外,随着核数呈指数级增长,进一步的相位降噪方法的扩展是不现实的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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