Die elektrischen Transportgrössen von ZnSb bei höheren Temperatören

Abstract

Measurements of the thermoelectric power α, the electrical conductivity σ, the Hall coefficient R and the transverse Nernst-Ettingshausen coefficient Q^τ of undoped and differently doped ZnSb and Zn_{0, 5}Cd_{0, 5}Sb are reported. The apparatus for measurements between room temperature and 500°C is described. The properties of the specimens turn out to be very unstable especially at higher temperatures.