{"title":"ESR and IR Studies on P-Doped a-Si:H/a-Si:H Junctions2","authors":"Fangqing Zhang, Guosheng Sun, Guanghua Chen","doi":"10.1515/9783112492963-051","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":11072,"journal":{"name":"Day 1 Mon, August 16, 2021","volume":"50 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Day 1 Mon, August 16, 2021","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1515/9783112492963-051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}