Ultraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors

Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI:10.1149/2.013204ESL

Y. Hwang, S. Seo, J. J. Jeon, B. S. Bae

引用次数: 49

Abstract

C using an ultraviolet(UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to theincorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-annealing and vacuum annealingimprove the electrical performance of the ZTO TFT with mobility of 2 cm

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低温溶胶-凝胶氧化锌锡薄膜晶体管的紫外光退火工艺

C采用紫外(UV)光退火工艺。制备了稳定的ZTO溶胶-凝胶溶液，由于加入了螯合剂乙酰丙酮(也可作为紫外线激活剂)，该溶液对紫外线有相当大的吸收。紫外光退火和真空退火提高了中通TFT的电学性能，迁移率达到2 cm

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electrochemical and Solid State Letters 工程技术-材料科学：综合

自引率

0.00%

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审稿时长

1.9 months