Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film

Abstract

Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.