Optimization of RF magnetron sputtering plasma using Zn target

Abstract

RF magnetron sputtering is a well known technique to fabricate metal and metal oxide thin film. Basically, metal oxide thin film was achieved using the combination of inert gas and reactive gas during the sputtering deposition. Recently, the fabrication of zinc oxide (ZnO) thin film has been investigated intensively in the global scale as well as in Malaysia [1]. Zinc oxide (ZnO) is a material of great interest for short-wavelength light-emitting electro-optical nanodevices due to its wide band gap (3.37 eV) and large excitation binding energy (60 meV). Their applications is in many fields such as optoelectronics, transparent conductive oxide, solar cell and photovoltaic, sensors and etc‥ Various methods has been used to obtain and improve ZnO thin film such as sputtering, chemical bath deposition, pulsed laser deposition and chemical vapor deposition [2,3].