Optimization of RF magnetron sputtering plasma using Zn target

N. Nayan
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引用次数: 3

Abstract

RF magnetron sputtering is a well known technique to fabricate metal and metal oxide thin film. Basically, metal oxide thin film was achieved using the combination of inert gas and reactive gas during the sputtering deposition. Recently, the fabrication of zinc oxide (ZnO) thin film has been investigated intensively in the global scale as well as in Malaysia [1]. Zinc oxide (ZnO) is a material of great interest for short-wavelength light-emitting electro-optical nanodevices due to its wide band gap (3.37 eV) and large excitation binding energy (60 meV). Their applications is in many fields such as optoelectronics, transparent conductive oxide, solar cell and photovoltaic, sensors and etc‥ Various methods has been used to obtain and improve ZnO thin film such as sputtering, chemical bath deposition, pulsed laser deposition and chemical vapor deposition [2,3].
基于Zn靶的射频磁控溅射等离子体优化
射频磁控溅射是制备金属和金属氧化物薄膜的一种常用技术。基本上,金属氧化物薄膜是在溅射沉积过程中使用惰性气体和反应气体的组合来获得的。近年来,氧化锌(ZnO)薄膜的制备在全球范围内以及马来西亚[1]都得到了广泛的研究。氧化锌(ZnO)具有宽带隙(3.37 eV)和高激发结合能(60 meV)的特点,是短波光电纳米器件中备受关注的材料。它们的应用在光电子、透明导电氧化物、太阳能电池和光伏、传感器等许多领域……已经使用各种方法来获得和改进ZnO薄膜,如溅射、化学浴沉积、脉冲激光沉积和化学气相沉积[2,3]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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