Contact Physics of Capacitive Interconnects

R. Malucci, A. Panella
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引用次数: 12

Abstract

The resistance and capacitance of a typical multi-point contact interface has been used to assess the impact on high frequency signal integrity. In the past it was shown how fully degraded interfaces can still provide acceptable performance for high data rate signal transfers. In the case of fully degraded contacts, signals were shown to transfer by capacitive coupling and wave propagation. This paper focuses on the critical parameters of a capacitive coupled interface. Moreover, the physics of the contact interface is related to contacts that rely on capacitive (as opposed to metallic) coupling and electronic tunneling. These results help define the physics and design requirements for capacitive coupling. In addition, critical performance parameters such as real contact area, film thickness and the nature of dielectric films are defined for high frequency signal propagation. This paper provides a contrast between the requirements for high frequency signal transfer using capacitive coupling and electron tunneling versus traditional metallic contact.
电容互连的接触物理
采用典型多点接触界面的电阻和电容来评估其对高频信号完整性的影响。过去的研究表明,完全降级的接口仍然可以为高数据速率信号传输提供可接受的性能。在接触完全退化的情况下,信号通过电容耦合和波传播传输。本文重点讨论了电容耦合接口的关键参数。此外,接触界面的物理特性与依赖于电容(而不是金属)耦合和电子隧穿的接触有关。这些结果有助于定义电容耦合的物理和设计要求。此外,定义了高频信号传播的关键性能参数,如实际接触面积、膜厚度和介电膜的性质。本文比较了电容耦合和电子隧穿与传统金属接触对高频信号传输的要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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