85W Pavg, 500W peak power, 1.8–2.2GHz wideband GaN Doherty power amplifier

Abstract

This paper presents a wideband Doherty Power Amplifier (DPA) suitable for Band-1 and Band-3 LTE Basestation applications, using Qorvo's 0.25um GaN on SiC High-Voltage technology. This DPA puts out 85W Pavg and 500W peak power at the Doherty 50-Ω output, with relatively flat 4549% average efficiency across 20% frequency bandwidth, when tested using 10dB PAR WCDMA signal. The DPA offers very good linearized DPD performance in band-1 for 1×20MHz and 3z20MHz LTE signals. To the knowledge of the authors, this is a first 2-Way DPA demonstration exhibiting such wideband high power levels, over 20% bandwidth, while maintaining good efficiency and relatively good linearized performance, with less complexity.