Terahertz detectors and emitters based on plasma wave oscillations in nanometer gate length transistors

Abstract

The channel of high electron mobility transistor can act as a resonator for the plasma waves propagating in 2D electron gas. The plasma frequency increases with reduction of the channel length and can reach the Terahertz range for nanometre size transistors. This work presents an overview of the experimental results on THz detection and emission by nanometre size transistors and multi-grating structures with nanometre size gates.