Photoconductive Arrays for High-Field Terahertz Generation

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Pub Date : 2019-10-21 DOI:10.1109/IRMMW-THz.2019.8874371

D. R. Bacon, M. Rosamond, T. Gill, A. Burnett, Lianhe H. Li, J. Cunningham, E. Linfield, A. Davies, P. Dean, J. Freeman

引用次数: 2

Abstract

We report on the development of a large-area photoconductive THz array structure with an LT-GaAs active region fabricated on quartz substrates using a BCB bonding process. These are shown to generate high THz-fields greater than 100kV/cm, with a bandwidth greater than 6 THz.

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用于高场太赫兹产生的光导阵列

我们报道了采用BCB键合工艺在石英衬底上制备的具有LT-GaAs活性区的大面积光导太赫兹阵列结构的发展。这些被证明产生大于100kV/cm的高太赫兹场，带宽大于6太赫兹。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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