Study on Electrical Characteristics of Double gate Junctionless Field Effect Transistor With Triangle Shaped Spacer

Abstract

A simulation study on electrical characteristics of a Double gate Junctionless field effect transistor (JLFET) with triangle shaped spacer is reported. The structure consists of a spacer of the shape of a triangle extended upto the source and drain ohmic contacts. A simulation study on electrical performance has been done in COGENDA VisualTCAD 2-D Device Simulator 1.8.2 platform. The study shows that the use of spacer in triangle shape enhances Ion/Ioff ratio and subthreshold slope compared to a conventional JLFET.