Design-manufacturing interface for 0.13 micron and below

A. Strojwas
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引用次数: 2

Abstract

Over the years, the increase in IC functionality has been achieved by a continuous drive towards smaller feature sizes. Due to the decreasing dimensions of semiconductor structures, the sensitivity to critical design and manufacturing parameters has risen dramatically. Vertical integration techniques and multi-level interconnect, which are becoming more common in modern technologies, have driven up the number of critical processing steps to several hundreds. These trends are expected to continue for the next several decades. The .13 micron technology is around the corner, as well as 300mm wafers. The increase in IC functionality has come with a skyrocketing capital spending (more than $2 billion per fabrication facility). Moreover, the product life cycles for leading edge IC's have become very short (less than 2 years).
设计-制造界面为0.13微米及以下
多年来,IC功能的增加是通过不断推动更小的特征尺寸来实现的。由于半导体结构尺寸的减小,对关键设计和制造参数的敏感性急剧提高。垂直集成技术和多层次互连技术在现代技术中越来越普遍,已将关键处理步骤的数量提高到数百个。这些趋势预计将持续几十年。13微米的技术即将问世,还有300毫米的晶圆。集成电路功能的增加伴随着资本支出的飙升(每个制造工厂超过20亿美元)。此外,前沿集成电路的产品生命周期已经变得非常短(不到2年)。
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