First Principles Study of the Interfaces Between Tungsten and Transition Metal Carbides: Structures, Energetic and Light Elements Trapping

Xuebang Wu, X. Zhang, Z.M. Xie, Xiang-yan Li, C. R. Miranda, C. Liu
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Abstract

The fundamental understanding of the structure and energetic properties of interfaces is crucial in materials design and lifetime predictions. In this work, we have performed systematic first-principles calculations to study the stability of the interfaces between tungsten (W) and transition metal carbides (TMC=ZrC, TiC, TaC, HfC, MoC and VC) and predict the trapping of light element impurities (H, He, Li, Be, B, C, N, O, S and P). For all the systems, the coherent W(100)-TMC(100) interfaces have a better stability with lower interface energies than the semi-coherent W(110)-TMC(100) ones. The electronic structure analysis show a strong covalent bonding between the interfacial W and C atoms. The interface and the C vacancy both behave as strong traps to H, He and other light elements, and the interface cohesion is strongly decreased in the presence of impurities. The detrapping energies for H and He at the interface are about 1.14 eV and 2.26 eV, respectively. However, the migration energy barrier of H and He along the interface is less than 0.35 eV, implying that the interface could act as a rapid diffusion path for H and He once they are trapped. The present results provide a consistent explanation for recent experimental phenomena of the interface structure and the H isotope retention in W-ZrC, W-TiC and W-TaC materials under irradiation and further recommend that a multi-scale interface structure may be a good choice for future W-based materials to synergistically enhance the overall performance as plasma facing materials.
钨与过渡金属碳化物界面的第一性原理研究:结构、高能和轻元素捕获
对界面结构和能量特性的基本理解在材料设计和寿命预测中是至关重要的。本文通过系统的第一性原理计算,研究了钨(W)与过渡金属碳化物(TMC=ZrC, TiC, TaC, HfC, MoC和VC)界面的稳定性,并预测了轻元素杂质(H, He, Li, Be, B, C, N, O, S和P)的捕获。对于所有系统,W(100)-TMC(100)界面的稳定性都优于半相干W(110)-TMC(100)界面,界面能量更低。电子结构分析表明界面W和C原子之间存在很强的共价键。界面和C空位都表现出对H、He和其他轻元素的强陷阱,并且在杂质存在时界面的内聚力大大降低。界面处H和He的脱陷能分别约为1.14 eV和2.26 eV。然而,H和He沿界面的迁移能垒小于0.35 eV,这意味着一旦H和He被捕获,界面可以作为H和He的快速扩散路径。本研究结果为W-ZrC、W-TiC和W-TaC材料在辐照下界面结构和H同位素保留的实验现象提供了一致的解释,并进一步表明多尺度界面结构可能是未来w基材料作为等离子体表面材料协同提高整体性能的良好选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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