Tuning the Perpendicular Magnetic Anisotropy in Co/Pt Multilayers Grown by Facing Target Sputtering and Conventional Sputtering

O. Yıldırım, M. Marioni, C. Falub, H. Rohrmann, D. Jaeger, Marco Rechsteiner, D. Schneider, H. Hug
{"title":"Tuning the Perpendicular Magnetic Anisotropy in Co/Pt Multilayers Grown by Facing Target Sputtering and Conventional Sputtering","authors":"O. Yıldırım, M. Marioni, C. Falub, H. Rohrmann, D. Jaeger, Marco Rechsteiner, D. Schneider, H. Hug","doi":"10.2139/ssrn.3891420","DOIUrl":null,"url":null,"abstract":"Magnetic properties of [Co(0.4 nm)/Pt(0.7 nm)]5 multilayers are tailored by controlling the sputtering voltage during the growth of cobalt layers by a facing target cathode. It is shown that increasing sputtering voltage up to 150 V leads to an improved crystalline texture and this results in larger magnetic anisotropies and out-of-plane coercive fields. At a higher cathode voltage of 540 V however crystalline texture quality slightly worsens and this is accompanied by a decrease in the effective anisotropy. Using facing target cathode sputtering, the crystalline structure of the multilayers can be controlled without applying any heat treatment and this can be used to optimize the magnetic properties of Co/Pt multilayers for specific applications.","PeriodicalId":7765,"journal":{"name":"AMI: Scripta Materialia","volume":"32 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"AMI: Scripta Materialia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2139/ssrn.3891420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Magnetic properties of [Co(0.4 nm)/Pt(0.7 nm)]5 multilayers are tailored by controlling the sputtering voltage during the growth of cobalt layers by a facing target cathode. It is shown that increasing sputtering voltage up to 150 V leads to an improved crystalline texture and this results in larger magnetic anisotropies and out-of-plane coercive fields. At a higher cathode voltage of 540 V however crystalline texture quality slightly worsens and this is accompanied by a decrease in the effective anisotropy. Using facing target cathode sputtering, the crystalline structure of the multilayers can be controlled without applying any heat treatment and this can be used to optimize the magnetic properties of Co/Pt multilayers for specific applications.
面向目标溅射和常规溅射生长Co/Pt多层膜中垂直磁各向异性的调节
通过对钴层生长过程中的溅射电压进行控制,对[Co(0.4 nm)/Pt(0.7 nm)]5多层膜的磁性进行了调整。结果表明,当溅射电压达到150 V时,晶体结构得到改善,磁各向异性和面外矫顽场增大。然而,在较高的阴极电压(540 V)下,晶体织构质量略有恶化,这伴随着有效各向异性的降低。利用面向目标阴极溅射,多层材料的晶体结构可以在不进行任何热处理的情况下控制,这可以用于优化特定应用的Co/Pt多层材料的磁性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信