{"title":"Efficiency Comparison of AC-Link and TIPS (SST) Topologies based on accurate device models","authors":"A. De, S. Roy, S. Bhattacharya","doi":"10.1109/ECCE.2012.6342282","DOIUrl":null,"url":null,"abstract":"In this paper, a comparative study on AC-Link™ Topology and a conventional solid state transformer (TIPS) has been shown. Alongside, as a building block, a comparative device level design study has been shown for 6.5kV Si-IGBT/SiC JBS diode, 6.5kV Si-IGBT/Si-PiN Diode and 10kV SiC-MOSFET/SiC-JBS Diode for a zero voltage/current transition and hard switched condition for medium voltage application. It is shown that soft switching yields a considerable reduction of losses for all devices. A low voltage hardware device test prototype has been built and tested. The main motive of the paper is to make a fair judgment on the two topologies with accurate device testing. This is further extended to the maximum attainable frequency analysis, corresponding efficiency comparison, frequency transfer capability and various other topology based comparisons.","PeriodicalId":6401,"journal":{"name":"2012 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"77 1","pages":"3862-3868"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Energy Conversion Congress and Exposition (ECCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCE.2012.6342282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper, a comparative study on AC-Link™ Topology and a conventional solid state transformer (TIPS) has been shown. Alongside, as a building block, a comparative device level design study has been shown for 6.5kV Si-IGBT/SiC JBS diode, 6.5kV Si-IGBT/Si-PiN Diode and 10kV SiC-MOSFET/SiC-JBS Diode for a zero voltage/current transition and hard switched condition for medium voltage application. It is shown that soft switching yields a considerable reduction of losses for all devices. A low voltage hardware device test prototype has been built and tested. The main motive of the paper is to make a fair judgment on the two topologies with accurate device testing. This is further extended to the maximum attainable frequency analysis, corresponding efficiency comparison, frequency transfer capability and various other topology based comparisons.