ASEC/Air Force LIPS-3 test panel results

P. Iles, K. I. Chang, K. S. Ling, C. Chu, J. Wise, R. Morris
{"title":"ASEC/Air Force LIPS-3 test panel results","authors":"P. Iles, K. I. Chang, K. S. Ling, C. Chu, J. Wise, R. Morris","doi":"10.1109/PVSC.1988.105820","DOIUrl":null,"url":null,"abstract":"Preorbit and in-orbit test panel results are presented. The test panel contained three types of solar cell: GaAs/Ge, GaAs, and silicon. The test results showed anomalies in tracking the cell performance in ground tests and into orbit. There was also in-orbit degradation greater than that expected from the radiation models used for the LIPS-3 orbit. With these reservations, the GaAs/Ge cell performance confirmed recent advances in explaining the electrical performance of these cells. Both the GaAs/Ge and GaAs cells have deeper p-n junction depths than current cells, and this probably caused some of the in-orbit degradation. For the silicon cells, the in-orbit degradation was greater than expected for their design and may have been affected by mechanical factors in panel assembly or mounting on the satellite.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"64 1","pages":"826-830 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105820","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Preorbit and in-orbit test panel results are presented. The test panel contained three types of solar cell: GaAs/Ge, GaAs, and silicon. The test results showed anomalies in tracking the cell performance in ground tests and into orbit. There was also in-orbit degradation greater than that expected from the radiation models used for the LIPS-3 orbit. With these reservations, the GaAs/Ge cell performance confirmed recent advances in explaining the electrical performance of these cells. Both the GaAs/Ge and GaAs cells have deeper p-n junction depths than current cells, and this probably caused some of the in-orbit degradation. For the silicon cells, the in-orbit degradation was greater than expected for their design and may have been affected by mechanical factors in panel assembly or mounting on the satellite.<>
ASEC/空军LIPS-3测试面板结果
给出了在轨前和在轨试验面板的结果。测试面板包含三种类型的太阳能电池:GaAs/Ge, GaAs和硅。测试结果显示,在跟踪电池在地面测试和进入轨道的性能方面存在异常。此外,lip -3轨道使用的辐射模型也存在比预期更大的在轨退化。有了这些保留,GaAs/Ge电池的性能证实了解释这些电池电性能的最新进展。GaAs/Ge和GaAs电池的p-n结深度都比现有电池深,这可能导致了一些在轨降解。对于硅电池来说,在轨道上的退化比其设计预期的要大,可能受到面板组装或安装在卫星上的机械因素的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
1.40
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信