CURRENT-VOLTAGE CHARACTERISTICS OF SOLAR CELLS p-n JUNCTION ZnO AND TiO2 PARAREL ON Cu2O LAYER

Abstract

Current-Voltage Characteristics of solar cells p-n junction ZnO and TiO 2 parallel in the Cu 2 O layer has been determined using solar irradiation. Metal oxide has been used as a semiconductor material, such as ZnO and TiO 2 is an n-type semiconductor. The material has a gap energy of 3.37 eV and 3.2 eV. Thermal oxidation is applied to commercial Cu plates for 60 minutes to produce Cu 2 O layers as p-type semiconductors. The process varies in temperature, namely 300, 400, and 500 °C. The process of thermal oxidation on Cu plates at a temperature of 300 °C increases the impurity in the Cu 2 O layer. The impurity layer is CuO. Then the CuO layer formed decreases with increasing temperature thermal oxidation. CuO layer increases the efficiency of solar cells p-n junction TiO 2 -ZnO parallel in the layer Cu 2 O. The results of measurements with sunlight showed that the TiO 2 -ZnO/Cu 2 O (300) samples had the highest solar cell efficiency, which was 0.28 %.