A single chip SiGe BiCMOS transceiver and SiGe power amplifier for 5.8 GHz WDCT applications

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI:10.1109/MWSYM.2005.1516715

R. Reimann, G. Krimmer, W. Bischof, S. Gerlach

引用次数: 1

Abstract

A fully integrated RF transceiver and power amplifier for 5.8 GHz frequency band operation are presented. The transceiver is composed of a low noise amplifier, low-IF receiver, digital demodulator, fully integrated VCO, PLL, transmitter and 2 dBm output amplifiers. For typical applications in transmit mode, a subsequent 25 dBm power amplifier (PA) is integrated. The PA and the transceiver are fabricated using Atmel's SiGe and SiGe BiCMOS technology, respectively. The transceiver and PA operate from a single lithium battery, avoiding mechanical tuning. The number of external components is drastically reduced compared to previous solutions.

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单芯片SiGe BiCMOS收发器和SiGe功率放大器，用于5.8 GHz WDCT应用

提出了一种完全集成的5.8 GHz频段射频收发器和功率放大器。收发器由低噪声放大器、低中频接收器、数字解调器、完全集成的压控振荡器、锁相环、发射器和2 dBm输出放大器组成。对于传输模式的典型应用，集成了后续的25 dBm功率放大器(PA)。扩音器和收发器分别采用Atmel的SiGe和SiGe BiCMOS技术制造。收发器和扩音器由单个锂电池操作，避免了机械调谐。与以前的解决方案相比，外部组件的数量大大减少。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE MTT-S International Microwave Symposium Digest, 2005.

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